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參數資料
型號: STF12PF06
廠商: 意法半導體
英文描述: P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET
中文描述: P通道60V的- 0.18歐姆-第12A TO-220/TO-220FP STripFET二功率MOSFET
文件頁數: 1/10頁
文件大?。?/td> 260K
代理商: STF12PF06
1/10
March 2005
STP12PF06
STF12PF06
P-CHANNEL 60V - 0.18
- 12A TO-220/TO-220FP
STripFET II POWER MOSFET
Rev.
2.0
Figure 1:
Package
Table 1: General Features
TYPICAL R
DS
(on) = 0.18
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less
critical
alignment
remarkable manufacturing reproducibility
steps
therefore
a
APPLICATIONS
MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STP12PF06
STF12PF06
60 V
60 V
< 0.20
< 0.20
12 A
12 A
1
2
3
1
2
3
TO-220
TO-220FP
Figure 2: Internal Schematic Diagram
Table 2:
Order Codes
PART NUMBER
STP12PF06
STF12PF06
Table 3:
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)
Pulse width limited by safe operating area.
NOTE
:
For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.
(1) I
SD
12A, di/dt
200A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 12A, V
DD
= 25V
MARKING
P12PF06
F12PF06
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
Parameter
Value
Unit
STP20PF06
STF20PF06
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
60
60
± 20
V
V
V
A
A
A
W
12
8.4
48
60
0.4
8
5.6
32
225
0.17
W/°C
V/ns
mJ
dv/dt
(1)
E
AS (2)
T
stg
T
j
6
200
-55 to 175
°C
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