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參數資料
型號: STGW40NC60V
廠商: 意法半導體
英文描述: N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH⑩ IGBT
中文描述: N溝道50A條- 600V到- 247超高速IGBT的PowerMESH⑩
文件頁數: 1/9頁
文件大小: 319K
代理商: STGW40NC60V
1/9
August 2003
STGW40NC60V
N-CHANNEL 50A - 600V
TO-247
Hyper Fast PowerMESH IGBT
I
HIGH INPUT IMPEDANCE
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
IGBTs, with outstanding
performances. The suffix “V” identifies a family
optimized for high frequency welding and SMPS
applications.
APPLICATIONS
I
HIGH FREQUENCY INVERTERS
I
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
I
UPS
I
WELDING
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat)
(Max)@25°C
I
C
@100°C
STGW40NC60V
600 V
< 2.5
V
50 A
MARKING
PACKAGE
PACKAGING
STGW40NC60V
GW40NC60V
TO-247
TUBE
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料
PDF描述
STGY40NC60V Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance Tolerance:+/- 20%; ESR:0.4ohm; Operating Temp. Max:105 C; Operating Temp. Min:-55 C RoHS Compliant: Yes
STGY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH?? IGBT
STH12NA60 Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes
STH33N20 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STH5NA100FI N-Channel Enhancement Mode Power MOS Transistors(N溝道增強模式快速功率MOS晶體管)
相關代理商/技術參數
參數描述
STGW40NC60V_04 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
STGW40NC60W 功能描述:IGBT 晶體管 600volt 40 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGW40NC60WD 功能描述:IGBT 晶體管 FAST N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGW40NC60WD_08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:40 A - 600 V - ultra fast IGBT
STGW40S120DF3 功能描述:IGBT 1200V 40A TO247 制造商:stmicroelectronics 系列:- 包裝:管件 零件狀態:有效 IGBT 類型:溝槽型場截止 電壓 - 集射極擊穿(最大值):1200V 電流 - 集電極(Ic)(最大值):80A 脈沖電流 - 集電極 (Icm):160A 不同?Vge,Ic 時的?Vce(on):2.15V @ 15V,40A 功率 - 最大值:468W 開關能量:1.43mJ(開),3.83mJ(關) 輸入類型:標準 柵極電荷:129nC 25°C 時 Td(開/關)值:35ns/148ns 測試條件:600V,40A,15 歐姆,15V 反向恢復時間(trr):355ns 封裝/外殼:TO-247-3 安裝類型:表面貼裝 供應商器件封裝:TO-247-3 標準包裝:30
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