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參數資料
| 型號： | STH60N10FI |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強型功率MOS器件 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 246K |
| 代理商： | STH60N10FI |
STH60N10/FI
STW60N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.02
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
VERY HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
May 1993
TYPE
V
DSS
R
DS(on)
< 0.025
< 0.025
< 0.025
I
D
STH60N10
STH60N10FI
STW60N10
100 V
100 V
100 V
60 A
36 A
60 A
TO-218
ISOWATT218
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STH/STW60N10
STH60N10FI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
V
DGR
100
V
V
GS
±
20
V
I
D
60
36
A
I
D
42
22
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
240
240
A
200
70
W
Derating Factor
1.33
0.56
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
4000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 175
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
150
1
2
3
1
2
3
TO-247
1/11
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