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參數(shù)資料
| 型號(hào)： | STN3NF06L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.07ohm - 4A條的SOT - 223 STripFET⑩二功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 286K |
| 代理商： | STN3NF06L |
1/8
December 2002
.
STN3NF06L
N-CHANNEL 60V - 0.07
- 4A SOT-223
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.07
I
EXCEPTIONAL dv/dt CAPABILITY
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
DC-DC & DC-AC COVERTERS
I
DC MOTOR CONTROL (DISK DRIVERS, etc.)
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STN3NF06L
60 V
< 0.1
4 A
1
2
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(
)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(
)
Current limited by the package
(1) I
≤
3A, di/dt
≤
150A/μs, V
≤
V
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 4A, V
DD
= 30V
Parameter
Value
60
60
± 16
4
2.9
16
3.3
0.026
10
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STN3NF06L_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60 V, 0.07 ヘ, 4 A, SOT-223 STripFET⑩ II Power MOSFET |
| STN3P6F6 | 功能描述:MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN3PF06 | 功能描述:MOSFET P-Ch 60 Volt 2.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN3PF06 | 制造商:STMicroelectronics 功能描述:Transistor Polarity:P Channel |
| STN3PF06_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:P-channel 60 V - 0.20 ヘ - 2.5 A - SOT-223 STripFET⑩ II Power MOSFET |
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