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參數資料
| 型號： | STN4NE03 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 30V - 0.045ohm - 4A - SOT-223 STripFET POWER MOSFET |
| 中文描述： | ? -通道30V的- 0.045ohm - 4A條-采用SOT - 223 STripFET功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | STN4NE03 |
STN4NE03
N - CHANNEL 30V - 0.045
- 4A - SOT-223
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.045
I
EXCEPTIONAL dv/dt CAPABILITY
I
AVALANCHERUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latestdevelopment of
STMicroelectronics
unique
Size
”
strip-based process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”
Single
Feature
rugged
avalanche
manufacturing
APPLICATIONS
I
DC MOTORCONTROL (DISK DRIVES, etc.)
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
I
POWER MANAGEMENT IN
BATTERY-OPERATED AND PORTABLE
EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
August 1998
1
2
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
V
GS
±
20
4
V
I
D
(*)
A
I
D
(*)
I
DM
(
)
2.5
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
16
A
P
tot
2.5
W
Derating Factor
0.02
W/
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
6
V/ns
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
o
C
(*) Limited by package
(1)I
SD
≤
10A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
jMAX
TYPE
V
DSS
R
DS(on)
< 0.06
I
D
STN4NE03
30 V
4 A
1/8
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STN4NE03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.037ohm - 4A - SOT-223 STripFET POWER MOSFET |
| STN4NE03L-ST | 制造商: 功能描述: 制造商:undefined 功能描述: |
| STN4NF03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET⑩ II POWER MOSFET |
| STN4NF03L | 功能描述:MOSFET N-Ch 30 Volt 6.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN4NF03L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET |
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