- 您現在的位置：買賣IC網 > PDF目錄382555 > STP120NF10 (意法半導體) N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET PDF資料下載
參數資料
| 型號： | STP120NF10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET |
| 中文描述： | N溝道100V的- 0.009糯- 120A條DPAK/TO-220 STripFET二功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 393K |
| 代理商： | STP120NF10 |
1/10
May 2003
STB120NF10
STP120NF10
N-CHANNEL 100V - 0.009
- 120A D2PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.009
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize the on-resistance. It is therefore suitable as
primary switch in advanced high-efficiency, high-
frequency isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any
applications with low gate drive requirements.
APPLICATIONS
I
AUDIO AMPLIFIERS
I
POWER TOOLS
TYPE
V
DSS
R
DS(on)
I
D
STB120NF10
STP120NF10
100 V
100 V
< 0.0105
< 0.0105
120 A
120 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB120NF10
STP120NF10
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
120A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60A, V
DD
= 50V
MARKING
B120NF10
P120NF10
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Parameter
Value
100
100
± 20
120
85
480
312
2.08
10
550
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
相關PDF資料 |
PDF描述 |
|---|---|
| STB120NH03L | N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION |
| STB120NH03LT4 | N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION |
| STB12NK80Z-S | N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET |
| STB12NK80Z | N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET |
| STB12NK80ZT4 | N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STP120NF10 | 制造商:STMicroelectronics 功能描述:MOSFET |
| STP120NF10D1 | 制造商:STMicroelectronics 功能描述:WAFER - Gel-pak, waffle pack, wafer, diced wafer on film |
| STP120NH03L | 功能描述:MOSFET N-CH 30V 60A TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:STripFET™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| STP12A60 | 制造商:SEMIWELL 制造商全稱:SEMIWELL 功能描述:Bi-Directional Triode Thyristor |
| STP12A80 | 制造商:SEMIWELL 制造商全稱:SEMIWELL 功能描述:Bi-Directional Triode Thyristor |
發布緊急采購，3分鐘左右您將得到回復。