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參數資料
| 型號： | STP60NE03L-10 |
| 廠商： | 意法半導體 |
| 英文描述： | PC 26C 26#20 PIN RECP |
| 中文描述： | ? -通道增強型單特征尺寸功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 99K |
| 代理商： | STP60NE03L-10 |
STP60NE03L-10
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICAL R
DS(on)
= 0.007
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
resulting transistor
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SOLENOID ANDRELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
INTERNAL SCHEMATIC DIAGRAM
December 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
30
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
V
GS
±
15
V
I
D
60
A
I
D
42
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
240
A
P
tot
120
W
Derating Factor
0.8
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
175
(
1
) I
SD
≤
60 A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.010
I
D
STP60NE03L-10
30 V
60 A
1
2
3
TO-220
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STP60NE03L-12 | N - CHANNEL 30V - 0.009 ohm - 60A - T0-220 STripFET POWER MOSFET |
| STP60NE10 | N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET |
| STP60N05 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| STP60N05-16 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 60A I(D) | TO-220 |
| STP60N05FI | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 32A I(D) | TO-220VAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STP60NE03L-12 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.009 ohm - 60A - T0-220 STripFET POWER MOSFET |
| STP60NE06-16 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP60NE06-16FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR MOSFET |
| STP60NE06-16FP | 制造商:STMicroelectronics 功能描述: |
| STP60NE06L-16 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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