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參數(shù)資料
| 型號： | STP80NE03L-06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式“的單一的功能SIZETM”功率MOSFET（不適用溝道增強(qiáng)模式功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | STP80NE03L-06 |
STP80NE03L-06
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.005
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE 100
oC
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
INTERNAL SCHEMATIC DIAGRAM
December 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
VDS
Drain-source Volt age (VGS =0)
30
V
VDGR
Drain- gate Voltage (RGS =20 k
)
30
V
VGS
Gat e-source Voltage
± 15
V
ID
Drain Current (continuous) at Tc =25
o C80
A
ID
Drain Current (continuous) at Tc =100
oC60
A
IDM(
)
Drain Current (pulsed)
320
A
Ptot
Tot al Dissipation at Tc =25
oC150
W
Derating F act or
1
W/
oC
dv/dt
Peak Diode Recovery voltage slope
7
V/ ns
Tstg
Storage T emperat ure
-65 to 175
oC
Tj
Max. O perating Junction Temperature
175
oC
(
) Pulse width limited by safe operating area
(1)ISD
≤ 80 A,di/dt ≤ 300 A/s, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
T YPE
VDSS
RDS(o n)
ID
ST P80NE03L-06
30 V
< 0.006
80 A
1
2
3
TO-220
1/6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP80NE03L-06 | 制造商:STMicroelectronics 功能描述:MOSFET N LOGIC TO-220 |
| STP80NE06-10 | 功能描述:MOSFET RO 511-STP80NF06 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP80NF03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0034 ohm - 80A TO-220 STripFET POWER MOSFET |
| STP80NF03L | 功能描述:MOSFET N-Ch 30 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP80NF03L-04 | 功能描述:MOSFET N-Ch 30 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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