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參數(shù)資料
| 型號(hào)： | STP80NF55L-06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET |
| 中文描述： | ? -通道55V的- 0.005歐姆- 80A的- 220 STripFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 83K |
| 代理商： | STP80NF55L-06 |
STP80NF55L-06
N - CHANNEL 55V - 0.005
- 80A TO-220
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.005
I
LOW THRESHOLD DRIVE
I
LOGIC LEVEL DEVICE
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
”
strip-based
process.
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
The
Feature
resulting
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
55
55
±
20
80
57
320
210
1.4
1
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/
o
C
J
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(
)
Pulse width limitedby safe operating area
E
AS
(
1
)
T
stg
T
j
(
1
)
starting T
j
= 25
o
C, I
D
=40A , V
DD
= 30V
TYPE
V
DSS
R
DS(on)
< 0.0065
I
D
STP80NF55L-06
55 V
80 A
1
2
3
TO-220
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP80NF55L-08 | 功能描述:MOSFET N-Ch 55 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP80NF70 | 功能描述:MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP80NF75L | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP80NS04Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET |
| STP80NS04ZB | 制造商:STMicroelectronics 功能描述: |
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