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參數(shù)資料
| 型號(hào)： | STPS8L30B-TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 8 A, 30 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, PLASTIC, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 97K |
| 代理商： | STPS8L30B-TR |
March 2006
Rev 4
1/7
7
STPS8L30
Low drop power Schottky rectifier
Main product characteristics
Features and benefits
■ Low cost device with low drop forward voltage
for less power dissipation and reduced
heatsink
■ Optimized conduction/reverse losses trade-off
which leads to the highest yield in the
application
■ High power surface mount miniature package
■ Avalanche capability specified
Description
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in DPAK and IPAK, this device is
especially intended for use as a Rectifier at the
secondary of 3.3 V SMPS or DC/DC units.
wheeling and polarity protection applications.
Order codes
IF(AV)
8 A
VRRM
30 V
Tj
150° C
VF(max)
0.40 V
Part Numbers
Marking
STPS8L30B
LS30
STPS8L30B-TR
LS30
STPS8L30H
A
NC
K
A
NC
K
DPAK
STPS8L30B
IPAK
STPS8L30H
Table 1.
Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS)
RMS forward voltage
7
A
IF(AV)
Average forward current
Tc = 135° C
δ = 0.5
8
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
IRRM
Peak repetitive reverse current
tp = 2 s F = 1 kHz square
1
A
IRSM
Non repetitive peak reverse current
tp = 100 s square
2
A
PARM
Repetitive peak avalanche power
tp = 1 s Tj = 25° C
3000
W
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature (1)
150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
1.
thermal runaway condition for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
>
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