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參數資料
| 型號： | STQ2NF06L |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 60V - 0.1 W - 2A TO-92 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.1糯- 2A至- 92 STripFET⑩二功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 329K |
| 代理商： | STQ2NF06L |
1/9
October 2003
.
STQ2NF06L
N-CHANNEL 60V - 0.1
- 2A TO-92
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.1
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
AVALANCHE RUGGED TECHNOLOGY
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
DC MOTOR CONTROL (DISK DRIVES, etc.)
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STQ2NF06L
60 V
<0.12
2 A
TO-92
TO-92
(Ammopack)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
(1)
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(2)
Peak Diode Recovery voltage slope
E
AS
(3)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
Pulse width limited by safe operating area.
(1)
Related to R
thj
-l
(2) I
SD
≤
2A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(3) Starting T
j
= 25
o
C, I
D
= 2A, V
DD
= 30V
Parameter
Value
60
60
± 16
2
1.2
8
3
8
6
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 150
°C
°C
INTERNAL SCHEMATIC DIAGRAM
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