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參數資料
型號: STSJ3NM50
廠商: 意法半導體
英文描述: N-CHANNEL 500V - 2.5ohm - 3A PowerSO-8 Zener-Protected MDmesh⑩ POWER MOSFET
中文描述: N溝道500V - 2.5ohm -第3A PowerSO - 8齊納⑩保護的MDmesh功率MOSFET
文件頁數: 1/8頁
文件大小: 220K
代理商: STSJ3NM50
1/8
August 2002
STSJ3NM50
N-CHANNEL 500V - 2.5
- 3A PowerSO-8
Zener-Protected MDmesh POWER MOSFET
I
TYPICAL R
DS
(on) = 2.5
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
IMPROVED ESD CAPABILITY
I
LOW INPUT CAPACITANCE AND GATE
CHARGE
I
LOW GATE INPUT RESISTANCE
I
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
A
= 25°C (1)
Drain Current (continuous) at T
C
= 100°C
I
DM
(2)
Drain Current (pulsed)
P
TOT
P
TOT
Total Dissipation at T
A
= 25°C (1)
Derating Factor (1)
dv/dt (3)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
TYPE
V
DSS
R
DS(on)
I
D
STSJ3NM50
500 V
< 3
3 A
Parameter
Value
Unit
500
V
500
V
± 30
V
3
0.63
1.89
A
A
A
12
A
Total Dissipation at T
C
= 25°C
70
3
W
W
0.02
15
W/°C
V/ns
– 65 to 150
°C
PowerSO-8
INTERNAL SCHEMATIC DIAGRAM
DRAIN CONTACT ALSO ON THE BACKSIDE
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