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參數資料
| 型號： | STU16NB50I |
| 廠商： | 意法半導體 |
| 英文描述： | TRANSISTOR MOSFET MAX-220 |
| 中文描述： | 晶體管MOSFET的最大- 220 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 49K |
| 代理商： | STU16NB50I |
STU16NB50
N-CHANNEL 500V - 0.28
- 15.6A-Max220
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.28
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
±
30V GATE TO SOURCE VOLTAGERATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change withoutnotice.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
500
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
500
V
±
30
15.6
V
A
9.8
A
62
A
160
W
1.28
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
(
1
) I
SD
≤
16A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
September 1999
TYPE
V
DSS
R
DS(on)
< 0.33
I
D
STU16NB50
500 V
15.6 A
123
Max220
1/6
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