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參數(shù)資料
| 型號： | STU7NB100 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET |
| 中文描述： | ? -頻道1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 45K |
| 代理商： | STU7NB100 |
STU7NB100
N - CHANNEL 1000V - 1.2
- 7.3A - Max220
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 1.2
I
EXTREMELY HIGH dv/dt CAPABILITY
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
GATE CHARGE MINIMIZED
I
REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLY (SMPS)
I
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
1000
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
1000
±
30
7.3
V
V
A
4.7
A
29
A
160
W
Derating Factor
1.28
W/
o
C
dv/dt
(1)
Peak Diode Recovery voltage slope
4
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤7.3 Α,
di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
March 1999
150
TYPE
V
DSS
1000 V
R
DS(on)
< 1.5
I
D
STU7NB100
7.3 A
Max220
123
1/5
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STU7NB90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET |
| STU7NB90I | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET |
| STU7NF25 | 制造商:STMicroelectronics 功能描述:MOSFET N-CH 250V IPAK |
| STU7NM60N | 功能描述:MOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STU7NM60N-S-H | 制造商:STMicroelectronics 功能描述: |
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