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參數資料
| 型號： | STV60NE06-16 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 60V - 0.013ohm - 60A PowerSO-10 STripFET POWER MOSFET |
| 中文描述： | ? -通道60V的- 0.013ohm - 60A章PowerSO - 10 STripFET功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 52K |
| 代理商： | STV60NE06-16 |
STV60NE06-16
N - CHANNEL 60V - 0.013
- 60A PowerSO-10
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.013
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
”
strip-based
process.
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
The
Feature
resulting
rugged
avalance
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc. )
INTERNAL SCHEMATIC DIAGRAM
May 2000
1
10
PowerSO-10
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
60
V
60
V
V
GS
I
D
I
D
I
DM
(
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
±
20
60
V
A
42
A
240
A
P
tot
150
W
1
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
6
V/ns
o
C
T
stg
T
j
Storage Temperature
-65 to 175
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
o
C
(
1
) I
SD
≤
60 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.016
I
D
STV60NE06-16
60 V
60 A
1/6
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