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參數資料
| 型號： | STW8NA80 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| 中文描述： | ? -通道增強型功率MOS晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 45K |
| 代理商： | STW8NA80 |
STW8NA80
STH8NA80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 1.3
I
±
30V GATE TO SOURCE VOLTAGERATING
I
100%AVALANCHE TESTED
I
REPETITIVEAVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATE GHARGEMINIMIZED
I
REDUCED THRESHOLD VOLTAGESPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology.The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled rug-
gednessand superiorswitching performance.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW8NA80
STH8NA80FI
V
DS
V
DGR
V
GS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
800
V
800
±
30
V
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
V
I
D
I
D
7.2
4.5
A
4.5
2.8
A
I
DM
(
)
P
tot
28.8
28.8
A
175
70
W
1.4
0.56
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
4000
V
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
DSS
R
DS(on)
< 1.50
< 1.50
I
D
STW8NA80
STH8NA80FI
800 V
800 V
7.2 A
4.5 A
October 1998
TO-247
ISOWATT218
1
2
3
1
23
1/6
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相關代理商/技術參數 |
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| STW8NC80Z | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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