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參數(shù)資料
| 型號： | STY100NS20FD |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY⑩ Power MOSFET |
| 中文描述： | N溝道200伏- 0.022ohm - 100號A Max247網(wǎng)眼密胺⑩功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 260K |
| 代理商： | STY100NS20FD |
1/8
January 2002
STY100NS20FD
N-CHANNEL 200V - 0.022
- 100A Max247
MESH OVERLAY Power MOSFET
(1)I
SD
≤
100A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
n
TYPICAL R
DS
(on) = 0.022
n
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
GATE CHARGE MINIMIZED
n
± 20V GATE TO SOURCE VOLTAGE RATING
n
LOW INTRINSIC CAPACITANCE
n
FAST BODY-DRAIN DIODE:LOW t
rr
, Q
rr
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, gives the lowest RDS(ON) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITCH MODE POWER SUPPLY (SMPS)
n
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STY100NS20FD
200V
< 0.024
100 A
Parameter
Value
Unit
200
V
200
V
±20
V
100
A
63
A
400
A
450
W
3.6
25
W/°C
V/ns
–65 to 150
°C
150
°C
Max247
1
23
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STY100NS20FD_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY? Power MOSFET |
| STY105NM50N | 功能描述:MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY112N65M5 | 功能描述:MOSFET N-Channel 650V 93A 0.019 Ohm Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY130NF20D | 功能描述:MOSFET N-Ch 200V 0.01 Ohm 130A STripFET II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY139N65M5 | 功能描述:MOSFET N-Ch 650V 0.014 Ohm Mdmesh V 130A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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