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參數資料
| 型號： | STY30NA50 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(Ｎ溝道增強模式功率ＭＯＳ晶體管) |
| 中文描述： | N溝道增強模式快速功率MOS晶體管（不適用溝道增強模式功率馬鞍山晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 48K |
| 代理商： | STY30NA50 |
STY30NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.15
I
EFFICIENT AND RELIABLEMOUNTING
THROUGH CLIP
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
REPETITIVE AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
100% AVALANCHE TESTED
I
GATECHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGESPREAD
DESCRIPTION
The Max247
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.175
I
D
STY30NA50
500 V
30 A
March 1996
Max247
TM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
500
V
V
DGR
500
V
V
GS
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
±
30
30
V
I
D
A
I
D
19
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
120
A
P
tot
300
W
Derating Factor
2.4
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-55 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
1/4
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| STY30NK90Z | 功能描述:MOSFET N-Ch 900 Volt 26 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY34NB50 | 功能描述:MOSFET N-Ch 500 Volt 34 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY34NB50F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 500V - 0.11ohm - 34 A - Max247 PowerMESH MOSFET |
| STY50N105DK5 | 功能描述:MOSFET N-CH 1050V 44A MAX247 制造商:stmicroelectronics 系列:SuperMESH5?? 包裝:管件 零件狀態:在售 FET 類型:N 溝道 技術:MOSFET（金屬氧化物） 漏源電壓（Vdss）:1050V 電流 - 連續漏極（Id）（25°C 時）:44A（Tc） 驅動電壓（最大 Rds On，最小 Rds On）:10V 不同 Id 時的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:175nC @ 10V Vgs（最大值）:±30V 不同 Vds 時的輸入電容（Ciss）（最大值）:6600pF @ 100V FET 功能:- 功率耗散（最大值）:625W（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:120 毫歐 @ 22A，10V 工作溫度:-55°C ~ 150°C 安裝類型:通孔 供應商器件封裝:MAX247? 封裝/外殼:TO-247-3 標準包裝:30 |
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