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參數資料
型號: SUD50N03-10CP
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized
中文描述: N溝道30 V的(副),175度,Celcious,MOSFET的脈寬調制優化
文件頁數: 1/4頁
文件大小: 80K
代理商: SUD50N03-10CP
SUD50N03-10AP
Vishay Siliconix
New Product
Document Number: 71134
S-99628—Rev. A, 10-Jan-00
www.vishay.com FaxBack 408-970-5600
2-1
N-Channel 30-V (D-S), 175 C, MOSFET PWM Optimized
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
a
30
0.010 @ V
GS
= 10 V
20
0.014 @ V
GS
= 4.5 V
18
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD50N03-10AP
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 175 C)
a
T
A
= 25 C
I
D
20
A
T
A
= 100 C
14
Pulsed Drain Current
I
DM
100
Continuous Source Current (Diode Conduction)
a
I
S
20
Maximum Power Dissipation
T
C
= 25 C
P
D
71
b
W
T
A
= 25 C
8.3
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
15
18
C/W
Steady State
40
50
Maximum Junction-to-Case
Steady State
R
thJC
1.75
2.1
Notes:
a.
b.
Surface mounted on 1” x 1” FR4 Board, t
See SOA curve for voltage derating.
10 sec.
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相關代理商/技術參數
參數描述
SUD50N03-10-E3 功能描述:MOSFET 30V 15A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N03-10P 功能描述:MOSFET 30V 50A 65W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N03-10P-E3 功能描述:MOSFET 30V 50A 65W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N03-10-T4 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R
SUD50N03-11 功能描述:MOSFET 30V 50A 62.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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