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參數資料
| 型號： | SUM110N10-09-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 其它接口 |
| 英文描述： | TERMINAL |
| 中文描述： | IGBT模塊 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 63K |
| 代理商： | SUM110N10-09-E3 |
FEATURES
TrenchFET Power MOSFET
200 C Junction Temperature
New Package with Low Thermal Resistance
100% R
g
Tested
APPLICATIONS
Automotive
42-V Power Bus
DC/DC Conversion
Motor Drivers
SUM110N10-09
Vishay Siliconix
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
www.vishay.com
1
N-Channel 100-V (D-S) 200 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
110
a
100
0.0095 @ V
GS
= 10 V
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
Ordering Information:
SUM110N10-09
SUM110N10-09-E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
100
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
I
D
110
a
T
C
= 125 C
87
a
A
Pulsed Drain Current
I
DM
I
AR
E
AR
440
Avalanche Current
Repetitive Avalanche Energy
b
75
L = 0.1 mH
280
437.5
c
mJ
Maximum Power Dissipation
b
T
C
= 25 C
T
A
= 25 C
d
P
D
W
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 200
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)
d
R
thJA
40
C/W
Junction-to-Case (Drain)
R
thJC
0.4
Notes
a.
b.
c.
d.
Package limited.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SUM110P04-04L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) 175-LC MOSFET |
| SUM110P04-04L-E3 | 功能描述:MOSFET 40V 110A 375W 4.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110P04-05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) MOSFET |
| SUM110P04-05_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) MOSFET |
| SUM110P04-05-E3 | 功能描述:MOSFET 40V 110A 375W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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