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參數(shù)資料
| 型號： | SUM40UFS |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.4 A, 4000 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 68K |
| 代理商： | SUM40UFS |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0040D
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SUM __ UF __ __
L
L
L
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
L
Package
___ = Axial
SMS = Surface Mount Square Tab
Recovery Time
UF = Ultra Fast
Voltage
20 = 2000 V
25 = 2500 V
30 = 3000 V
35 = 3500 V
40 = 4000 V
50 = 5000 V
SUM20UF & UFSMS
thru
SUM50UF & UFSMS
0.4 AMP
2000-5000 VOLTS
60 nsec
HIGH VOLTAGE
ULTRA FAST RECTIFIER
FEATURES:
Fast Recovery: 60 nsec Maximum
PIV to 5000 Volts
Hermetically Sealed Axial and Surface
Mount Package
Void-Free Construction
Metallurgically Bonded
175°C Maximum Operating Temperature
TX, TXV, and Space Level Screening
Available
2/
ELECTRICAL CHARACTERISTICS
Part
Number
Peak
Inverse
Voltage
Average
Rectifier
Current
Maximum
Reverse
Current
Maximum
Forward
Voltage
Maximum
Surge
Current
(1 Cycle)
Maximum
Reverse
Recovery
Time
Maximum
Junction
Capacitance
Typical
Thermal
Impedance
Symbol
PIV
I0
IR
VF
IFSM
tRR
CJ
θJL/θJE
Units
Volts
mA
A
Volts
Amps
nsec
pF
°C/W
Conditions
25°C
100°C
25°C
100°C
25°C
VR = 100V
fT = 1MHZ
L = 3/8”
SUM20UF
2000
400
250
1.0
25
10
25
60
10
16
SUM25UF
2500
400
250
1.0
25
10
25
60
10
16
SUM30UF
3000
400
250
1.0
25
13
25
60
10
16
SUM35UF
3500
400
250
1.0
25
13
25
60
10
16
SUM40UF
4000
400
250
1.0
25
13
25
60
10
16
SUM50UF
5000
400
250
1.0
25
13
25
60
10
16
1/ For ordering information, price, and availability – contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Operating and testing over 10,000 V/inch may require encapsulation or immersion in a suitable
dielectric material.
4/ Max. forward voltage measured with instantaneous forward pulse of 300sec minimum.
5/ Max. Lead/End Tab temp. for soldering is 250°C, 3/8” from case for 5 sec maximum.
6/ Operating and storage temperature: -65°C to +175°C.
7/ Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=25mA, TA=25°C.
Axial
Surface Mount
Square Tab
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUM50UFS | 0.4 A, 5000 V, SILICON, SIGNAL DIODE |
| SUM25UFSMSTX | 0.4 A, 2500 V, SILICON, SIGNAL DIODE |
| SUM25UFSMSS | 0.4 A, 2500 V, SILICON, SIGNAL DIODE |
| SUM35UFTX | 0.4 A, 3500 V, SILICON, SIGNAL DIODE |
| SUM20UFTX | 0.4 A, 2000 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM40UFSMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:0.4 AMPS 2000 - 5000 VOLTS 60 nsec HIGH VOLTAGE ULTRA FAST RECTIFIER |
| SUM45N25-58 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 250-V (D-S), 175 Degrees Celcious, MOSFET |
| SUM45N25-58_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 250-V (D-S) 175 °C MOSFET |
| SUM45N25-58-E3 | 功能描述:MOSFET 250V 45A 375W 58mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM45N25-58-E3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 250V 45A TO-263 |
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