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參數資料
| 型號： | SUP75N06 |
| 英文描述： | N-Channel Enhancement-Mode Transistors |
| 中文描述： | N溝道增強模式晶體管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 90K |
| 代理商： | SUP75N06 |
SUP/SUB75N08-09L
Vishay Siliconix
New Product
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
www.vishay.com FaxBack 408-970-5600
2-1
N-Channel 75-V (D-S), 175 C MOSFET
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
75
0.009 @ V
GS
= 10 V
0.011 @ V
GS
= 4.5 V
75
a
D
G
S
N-Channel MOSFET
TO-220AB
Top View
SUP75N08-09L
G D S
DRAIN connected to TAB
TO-263
S
D
G
Top View
SUB75N08-09L
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
75
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
I
D
75
a
A
T
C
= 125 C
66
Pulsed Drain Current
I
DM
I
AR
E
AR
240
Avalanche Current
Repetitive Avalanche Energy
b
75
L = 0.1 mH
280
250
c
mJ
Maximum Power Dissipation
b
T
C
= 25 C (TO-220AB and TO-263)
T
A
= 25 C (TO-263)
d
P
D
W
3.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)
d
R
thJA
40
C/W
Free Air (TO-220AB)
62.5
Junction-to-Case
R
thJC
0.6
Notes
a.
b.
c.
d.
Package limited.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
相關PDF資料 |
PDF描述 |
|---|---|
| SUP75N06-08 | N-Channel Enhancement-Mode Transistors |
| SUP75N04-05L | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-220AB |
| SUB75N04-05L | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| SUP75N08 | N-Channel 75-V (D-S), 175C MOSFET |
| SUP75N08-09L | N-Channel 75-V (D-S), 175C MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SUP75N06-06 | 功能描述:MOSFET 60V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP75N06-07L | 功能描述:MOSFET 60V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP75N06-07L-E3 | 功能描述:MOSFET 60V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP75N06-08 | 功能描述:MOSFET 60V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP75N06-08 | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-220AB |
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