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參數資料
| 型號： | SUU15N15-95 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 150-V (D-S) 175_C MOSFET |
| 中文描述： | N溝道150 -五（副）175_C MOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 56K |
| 代理商： | SUU15N15-95 |
FEATURES
D
TrenchFET
r
Power MOSFETS
D
175
_
C Junction Temperature
D
100% R
g
Tested
APPLICATIONS
D
Primary Side Switch
SUU15N15-95
Vishay Siliconix
Document Number: 71670
S-31724—Rev. B, 18-Aug-03
www.vishay.com
1
N-Channel 150-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
150
0.095 @ V
GS
= 10 V
15
0.100 @ V
GS
= 6 V
15
D
G
S
N-Channel MOSFET
TO-251
S
G
D
Top View
Drain Connected to Tab
Ordering Information: SUU15N15-95
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 175
_
C)
b
T
C
= 25
_
C
I
D
15
T
C
= 125
_
C
8.7
Pulsed Drain Current
I
DM
25
A
Continuous Source Current (Diode Conduction)
I
S
15
Avalanche Current
I
AR
15
Repetitive Avalanche Energy (Duty Cycle
≤
1%)
L = 0.1 mH
E
AR
11.3
mJ
Maximum Power Dissipation
T
C
= 25
_
C
P
D
62
b
W
T
A
= 25
_
C
2.7
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
--55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient
t A bi
a
t
≤
10 sec
R
thJA
16
20
Steady State
45
55
_
C/W
Junction-to-Case (Drain)
R
thJC
2
2.4
Notes
a.
b.
Surface Mounted on 1” x1” FR4 Board.
See SOA curve for voltage derating.
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