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參數資料
| 型號： | T2156N22TOC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 晶閘管 |
| 英文描述： | 4600 A, 2200 V, SCR |
| 文件頁數： | 1/10頁 |
| 文件大小： | 266K |
| 代理商： | T2156N22TOC |
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T2156N
SDB-MA / 18 Aug 1995, A. Rüther
A 115/95
1/10
Seite/page
enndaten
Elektrische Eigenschaften
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Tvj = -40°C... Tvj max
VDRM,VRRM 2200
2400
2600
2800
V
Vorwrts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Tvj = -40°C... Tvj max
VDSM
2200
2400
2600
2800
V
Rückwrts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
VRSM
2300
2500
2700
2900
V
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
ITRMSM
4600 A
Dauergrenzstrom
average on-state current
TC = 85 °C
TC = 64 °C
ITAVM
2159
2930
A
Stossstrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
ITSM
44000
40000
A
1)
A
Grenzlastintegral
It-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
It
9680
8000
10 As
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 60747-6
f = 50 Hz, iGM = 1,6 A
diG/dt = 1,6 A/s
(diT/dt)cr
150 A/s
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5
th letter C
5.Kennbuchstabe / 5
th letter F
(dvD/dt)cr
500
1000
V/s
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Tvj = Tvj max , iT = 8800 A
Tvj = Tvj max , iT = 1800 A
vT
max.
2,65
1,38
V
Schleusenspannung
threshold voltage
Tvj = Tvj max
V(TO)
1,05 V
Ersatzwiderstand
slope resistance
Tvj = Tvj max
rT
0,154 m
Durchlasskennlinie
600 A ≤ iT ≤ 10000 A
on-state characteristic
T
i
D
1)
i
(
ln
C
i
B
A
v
+
+
+
=
Tvj = Tvj max
A=
B=
C=
D=
9,039E-01
1,344E-04
-7,137E-03
6,776E-03
Zündstrom
gate trigger current
Tvj = 25 °C, vD = 12V
IGT
max.
300 mA
Zündspannung
gate trigger voltage
Tvj = 25 °C, vD = 12V
VGT
max.
3 V
Nicht zündender Steuerstrom
gate non-trigger current
Tvj = Tvj max , vD = 12V
Tvj = Tvj max , vD = 0,5 VDRM
IGD
max.
10
5
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
Tvj = Tvj max , vD = 0,5 VDRM
VGD
max.
0,25 V
Haltestrom
holding current
Tvj = 25°C, vD = 12V
IH
max.
300 mA
Einraststrom
latching current
Tvj = 25°C, vD = 12V, RGK ≥ 10
iGM = 1,6 A, diG/dt = 1,6 A/s
tg = 20 s
IL
max.
1500 mA
Vorwrts- und Rückwrts-Sperrstrom
forward off-state and reverse current
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
max.
250 mA
Zündverzug
gate controlled delay time
DIN IEC 60747-6
Tvj = 25 °C, iGM = 1,6 A
diG/dt = 1,6 A/s
tgd
max.
3 s
1) Gehusegrenzstrom IRSM(case) = 38kA (50Hz Sinushalbwelle) / Peak case non-rupture current IRSM(case) = 38kA (50Hz sinusoidal half-wave)
prepared by: H.Sandmann
date of publication:
2007-09-03
approved by: J.Przybilla
revision:
1
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| T2159N20TOF | 功能描述:SCR模塊 PHASE CONTROL THYRISTOR RoHS:否 制造商:Vishay Semiconductors 開啟狀態 RMS 電流 (It RMS):260 A 不重復通態電流:4000 A 最大轉折電流 IBO:4200 A 額定重復關閉狀態電壓 VDRM:1.6 kV 關閉狀態漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發電壓 (Vgt): 柵觸發電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK |
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