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參數資料
| 型號： | T4312816A-10S |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 8M x 16 SDRAM |
| 中文描述： | 8米× 16內存 |
| 文件頁數： | 1/29頁 |
| 文件大?。?/td> | 711K |
| 代理商： | T4312816A-10S |
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TE
CH
tm
SDRAM
FEATURES
3.3V power supply
Four banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going
edge of system clock
Burst Read Single-bit Write operation
DQM for masking
Auto refresh and self refresh
64ms refresh period (4K cycle)
MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
Available package type in 54 pin TSOP(II)
Operating temperature : 0 ~ +70
°
C
ORDERING INFORMATION
Preliminary T4312816A
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: APR. 2003
Revision: 0.B
8M x 16 SDRAM
2M x 16bit x 4Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T4312816A is 134,217,728 bits
synchronous high data rate Dynamic RAM
organized as 4 x 2,097,152 words by 16 bits,
fabricated
with
high
technology .
performance
CMOS
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clockcycle . Range of operating
frequencies , programmable burst length and
programmable latencies allow the same device to
be useful for a variety of high bandwidth , high
performance memory system applications.
PIN ARRANGEMENT (
Top View)
D Q 1
V
D D
4 6
4 5
4 4
4 3
4 1
4 2
4 0
3 6
3 5
3 4
3 3
3 2
3 1
3 0
2 9
1
2
3
4
6
5
7
8
9
1 1
1 5
1 6
1 7
1 8
1 9
2 0
V
D D Q
D Q 1 1
D Q 1
0
D Q 9
A 8
A 7
A 9
1 0
2 1
2 2
4 7
4 8
4 9
5 0
V
S S Q
D Q 2
A 0
A 1
D Q 1 5
D Q 1 4
V s s
2 3
2 4
2 5
2 8
2 7
2 6
D Q 3
D Q 0
V
D D Q
D Q 4
D Q 5
V
S S Q
D Q 6
R A S
C S
B A 1
A 1 0 /A P
A 2
A 3
V
D D
V
S S Q
D Q 1 3
D Q 1 2
U D Q M
N .C
C L K
C K E
V s s
A 6
A 5
A 4
1 2
1 3
1 4
3 9
3 8
3 7
D Q 7
V
D D
L D Q M
D Q 8
V s s
N .C /R F U
W E
C A S
5 4 P IN T S O P (II)
(4 0 0 m il x 8 7 5 m il)
(0 .8 m m P IN P IT C H )
5 1
5 2
5 3
5 4
V
D D Q
B A 0
V
D D Q
V
S S Q
A 1 1
PART NO.
MAX
FREQUENCY TEMPERATURE
166 MHz
T4312816A-6S
0 ~ +70
°
C
0 ~ +70
°
C
0 ~ +70
°
C
0 ~ +70
°
C
0 ~ +70
°
C
T4312816A-7S
143 MHz
T4312816A-7.5S
T4312816A-8S
133 MHz
125 MHz
T4312816A-10S
100 MHz
相關PDF資料 |
PDF描述 |
|---|---|
| T4312816A-6S | 8M x 16 SDRAM |
| T4312816A-7.5S | 8M x 16 SDRAM |
| T4312816A-7S | 8M x 16 SDRAM |
| T4312816A-8S | 8M x 16 SDRAM |
| T4312816B | 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| T4312816A-6S | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM |
| T4312816A-7.5S | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM |
| T4312816A-7S | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM |
| T4312816A-8S | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM |
| T4312816B | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
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