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參數(shù)資料
| 型號(hào)： | T431616C-6S |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| 中文描述： | 100萬(wàn)× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁(yè)數(shù)： | 1/30頁(yè) |
| 文件大小： | 720K |
| 代理商： | T431616C-6S |
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TE
CH
tm
SDRAM
FEATURES
3.3V power supply
Clock cycle time : 6 / 7 ns
Dual banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going
edge of system clock
Burst Read Single-bit Write operation
DQM for masking
Auto refresh and self refresh
32ms refresh period (2K cycle)
MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
Available package type :
- 50 pin TSOP(II)/lead-free
Operating temperature :
-
0 ~ +70
°
C
ORDERING INFORMATION
T431616C
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
1M x 16 SDRAM
512K x 16bit x 2Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T431616C is 16,777,216 bits synchronous
high data rate Dynamic RAM organized as
2 x 524,288 words by 16 bits , fabricated with high
performance CMOS technology . Synchronous
design allows precise cycle control with the use of
system clock I/O transactions are possible on every
clock cycle . Range of operating frequencies ,
programmable burst length and programmable
latencies allow the same device to be useful for a
variety of high bandwidth , high performance
memory system applications.
PART NO.
CLOCK
CYCLE TIME
MAX
FREQUENCY
166 MHz
PACKAGE
OPERATING
TEMPERATURE
0 ~ +70
°
C
T431616C-6S
6ns
TSOP-II
TSOP-II
Lead-free
T431616C-6SG
6ns
166 MHz
0 ~ +70
°
C
T431616C-7S
7ns
143 MHz
TSOP-II
0 ~ +70
°
C
T431616C-7SG
7ns
143 MHz
TSOP-II
Lead-free
0 ~ +70
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T431616C-6SG | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7SG | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616D | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616D-5C | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T431616C-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7SG | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616D | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616D-5C | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
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