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參數資料
| 型號： | T82F117.5B7DN |
| 廠商： | POWEREX INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 1177.5 A, SCR |
| 封裝： | T82, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 0K |
| 代理商： | T82F117.5B7DN |
相關PDF資料 |
PDF描述 |
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| T9GH029B7DN | 1413 A, SCR |
| T82F156.5B2DN | 1020.5 A, SCR |
| T82F166.5B2DN | 1020.5 A, SCR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| T82F126543DN | 制造商:Powerex Power Semiconductors 功能描述:THYRISTOR, SCR, 650A, 1.2KV, TO-200AC; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:200mA; Current It av:650A; On State RMS Current IT(rms):1kA; Gate Trigger Voltage Max Vgt:3V; Thyristor Case:TO-200AC;RoHS Compliant: Yes |
| T82F126553DN | 制造商:Powerex Power Semiconductors 功能描述:THYRISTOR, SCR, 650A, 1.2KV, TO-200AC; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:200mA; Current It av:650A; On State RMS Current IT(rms):1kA; Gate Trigger Voltage Max Vgt:3V; Thyristor Case:TO-200AC;RoHS Compliant: Yes |
| T82F126563DN | 制造商:Powerex Power Semiconductors 功能描述:THYRISTOR, SCR, 650A, 1.2KV, TO-200AC; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:200mA; Current It av:650A; On State RMS Current IT(rms):1kA; Gate Trigger Voltage Max Vgt:3V; Thyristor Case:TO-200AC;RoHS Compliant: Yes |
| T82F126573DN | 制造商:Powerex Power Semiconductors 功能描述:THYRISTOR, SCR, 650A, 1.2KV, TO-200AC; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:200mA; Current It av:650A; On State RMS Current IT(rms):1kA; Gate Trigger Voltage Max Vgt:3V; Thyristor Case:TO-200AC;RoHS Compliant: Yes |
| T82F1265B3DN | 制造商:Powerex Power Semiconductors 功能描述:THYRISTOR, SCR, 650A, 1.2KV, TO-200AC; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:200mA; Current It av:650A; On State RMS Current IT(rms):1kA; Gate Trigger Voltage Max Vgt:3V; Thyristor Case:TO-200AC;RoHS Compliant: Yes |
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