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參數資料
| 型號： | TA1282N |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) |
| 中文描述： | 外延平面PNP晶體管（高電流） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 68K |
| 代理商： | TA1282N |
1999. 9. 10
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1282
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
HIGH CURRENT APPLICATION.
FEATURES
Complementary to KTC3210.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. COLLECTOR
3. BASE
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
Classification 0:100
200, Y:160
320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-2
A
Emitter Current
I
E
2
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-30V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-30
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
C
=-1mA, I
C
=0
-5
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=-2V, I
C
=-500mA
100
-
320
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-1.5A, I
B
=-0.03A
-
-
-2.0
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-500mA
-
-
-1.0
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-500mA
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
48
-
pF
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