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參數(shù)資料
| 型號(hào)： | TA33-5M2G25RD |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual Value, Chip Resistor Center Tap |
| 中文描述： | 雙重價(jià)值，片式電阻中心抽頭 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 198K |
| 代理商： | TA33-5M2G25RD |
Document Number: 60066
Revision 24-Feb-06
www.vishay.com
150
TA 33
Vishay Sfernice
VISHAY THIN FILM FRANCE +33.4.93.37.28.24 FAX: +33.4.93.37.27.31 GERMANY +49.9287.710 FAX: +49 9287.70435 ISRAEL +972.3.557.0945 FAX: +972.3.558.9121
ITALY + 39.2.300.11919 FAX: +39.2.300.11999 JAPAN +81.42.729.0661 FAX: +81.42.729.3400 SINGAPORE +65.788.6668 FAX: +65.788.0988
SWEDEN +46.8.594.70590 FAX: +46.8.594.70581 UK +44 191 514 8237 FAX: +44 1953 457 722 USA: (610) 407-4800 FAX: (610) 640-9081
Dual Value, Chip Resistor Center Tap
Actual Size
SCHEMATIC
These tantalum chips combine excellent stability 0.07 %
(2000 hours, rated power at 70
°
C) with great power han-
dling capacity. Two bonding pads per termination allow
greater flexibility in hybrid layout design.
R
T
R
1
R
2
R
T
= R
1
+ R
2
with R
1
= R
2
Standard
FEATURES
Center tap feature
Resistor material: self - passivating
Tantalum Nitride
Silicon substrate for good power dissipation
Low cost
TEST
SPECIFICATIONS
CONDITIONS
MATERIAL
TANTALUM NITRIDE
Resistance Range
50 ohms to 500 Kohms
for R
T
= R
1
+ R
2
-
55
°
C to + 155
°
C
TCR:
Tracking
±
5 ppm/
°
C
Absolute
±
100 ppm/
°
C (
±
50 ppm/
°
C on Request)
-
55
°
C to + 155
°
C
Tolerance:
Ratio
1/1 standard
Absolute
±
0.5 %,
±
1 %,
±
2 %
Matching
±
0.5 % Standard
Power Dissipation
250 mW at + 25
°
C, 125 mW at + 70
°
C, 50 mW at + 125
°
C
Stability
±
0.07 % typical,
±
0.1 Max.
2000 hrs. at +70
°
C under Pn
Working Voltage
50 Volts DC on R
T
-
55
°
C to + 155
°
C
Operating Temperature Range
Storage Temperature Range
-
55
°
C to + 155
°
C
Noise
<
-
35 dB typical
MIL-STD-202 Method 308
Thermal EMF
0.01
μ
V/
°
C
Shelf Life Stability
100 ppm
1 year at + 25
°
C
STANDARD ELECTRICAL SPECIFICATIONS
ABS
TRACKING
TCR
100 ppm/
°
C
5 ppm/
°
C
ABS
RATIO
TOL
0.5 %
0.5 %
◆
TYPICAL PERFORMANCE
RoHS
COMPLIANT
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