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參數資料
型號: TA4500F
廠商: Toshiba Corporation
英文描述: 1.9 GHz Band RX Front-End IC
中文描述: 1.9吉赫頻帶收發前端集成電路
文件頁數: 1/12頁
文件大小: 341K
代理商: TA4500F
TA4500F
2007-11-01
1
TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic
TA4500F
1.9 GHz Band RX Front-End IC
PHS, Digital Cordless Telecommunication Applications
Features
Low-noise amplifier / down-conversion mixer
Integrated local buffer amplifier
Single positive power supply: V
CC
= 3.0 V
Large conversion gain: G
LNA
= 17.5 dB (typ.)
High input IP3:
High 1/2 IF reduction ratio: 1/2IFR
MIX
= 45 dB (typ.)
Small package: QS16 (2.5 mm
×
2.5 mm
×
0.55 mm)
Absolute Maximum Ratings
(Ta = 25°C)
G
MIX
= 5.0 dB (typ.)
IIP3
LNA
= -7.5 dBmW (typ.)
IIP3
MIX
= 7.0 dBmW (typ.)
Characteristic
Symbol
Rating
Unit
Supply voltage
V
CC
(Note 1)
4.5
V
P
IN
(RF_IN)
10
dBmW
P
IN
(LO_IN)
0
dBmW
Input power
P
IN
(MIX_IN)
0
dBmW
Power dissipation
P
d
(Note 2)
500
mW
Operating temperature range
Topr
40 to +85
°C
Storage temperature range
Tstg
55 to +150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = VCC1 = VCC2 = VCC3
Note 2: When mounted on a 30 mm × 35 mm × 0.6 mm FR4 substrate at Ta = 25°C (double-sided substrate: the
reverse side is ground connection)
Caution
This device is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected
against electrostatic discharge by using an earth strap, a conductive mat and an ionizer.
QS16
Weight: 0.0065 g (typ.)
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