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參數(shù)資料
| 型號(hào)： | TAN250A |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 23K |
| 代理商： | TAN250A |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 20 mA
BV
CES
I
C
= 25 mA
BV
EBO
I
E
= 20 mA
I
CBO
V
CB
= 50 V
h
FE
V
CE
= 5 V
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60
UNITS
V
R
BE
= 10
60
V
4.0
V
12
mA
I
C
= 1.0 A
20
120
---
P
OUT
P
G
h
C
V
CC
= 50 V P
IN
= 13 W f = 960 to 1215 MHz
Pulse Width = 20
μ
S Duty Cycle = 5 %
250
6.0
7.0
40
W
dB
%
PACKAGE STYLE
RF POWER TRANSISTOR
TAN250A
DESCRIPTION:
The
ASI TAN250A
is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
·
Gold Metallization
·
Hermetic Package
·
Input/Output Matching
MAXIMUM RATINGS
I
C
30 A
V
CB
60 V
P
DISS
575 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
-65
O
C to +200
O
C
0.30
O
C/W
T
STG
q
JC
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