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參數資料
| 型號： | TB1100H |
| 廠商： | Diodes Inc. |
| 英文描述： | 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 中文描述： | 100號A的雙向表面貼裝晶閘管浪涌保護器 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 184K |
| 代理商： | TB1100H |
DS30360 Rev. 3 - 2
1 of 4
TB0640H - TB3500H
TB0640H - TB3500H
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR
SURGE PROTECTIVE DEVICE
Features
·
100A Peak Pulse Current @ 10/1000
m
s
400A Peak Pulse Current @ 8/20
m
s
58 - 320V Stand-Off Voltages
Oxide-Glass Passivated Junction
Bi-Directional Protection In a Single Device
High Off-State impedance and Low On-State
Voltage
·
·
·
·
·
Mechanical Data
·
Case: SMB, Molded Plastic
Plastic Material: UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
Weight: 0.093 grams (approx.)
Marking: Date Code & Marking Code (See Page 4)
Ordering Information: See Page 4
·
·
·
·
·
·
·
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
B
A
C
D
F
H
E
G
Characteristic
Symbol
I
pp
I
TSM
T
j
T
STG
R
q
JL
R
q
JA
D
VBR/
D
T
j
Value
100
50
-40 to +150
-55 to +150
20
100
0.1
Unit
A
A
°
C
°
C
°C/W
°C/W
%/°C
Non-Repetitive Peak Impulse Current @10/1000us
Non-Repetitive Peak On-State Current @8.3ms (one-half cycle)
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Typical Positive Temperature Coefficient for Breakdown Voltage
SMB
Min
Dim
A
B
C
D
E
F
G
H
All Dimensions in mm
Max
4.06
4.57
3.30
3.94
1.96
2.21
0.15
0.31
5.21
5.59
0.05
0.20
2.01
2.62
0.76
1.52
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
Maximum Rated Surge Waveform
Waveform
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T, K20/K21
FCC Part 68
GR-1089-CORE
Ipp (A)
500
400
250
200
160
100
0
TIME
100
50
0
I
, PEAK PULSE CURRENT (%)
PP
Peak Value (I )
pp
Half Value
t = rise time to peak value
r
t = decay time to half value
p
t
r
t
p
C
U
D
O
R
P
W
E
N
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TB1100H-13 | 功能描述:硅對稱二端開關元件 90V 100A RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TB1100H-13-F | 功能描述:硅對稱二端開關元件 90V 100A RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TB1100L | 制造商:LITEON 制造商全稱:Lite-On Technology Corporation 功能描述:SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB1100L-13 | 功能描述:硅對稱二端開關元件 30A 90V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TB1100L-13-F | 功能描述:硅對稱二端開關元件 30A 90V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
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