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參數資料
| 型號： | TC0205AD |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N- and P-Channel ±20-V Low-Threshold MOSFET(漏源電壓±20V的雙N溝道/P溝道低閾值MOSFET) |
| 中文描述： | 雙N和P通道± 20 - V低閾值MOSFET的（漏源電壓± 20V的的雙?溝道/頁溝道低閾值MOSFET的） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 51K |
| 代理商： | TC0205AD |
TC0205AD
Vishay Siliconix
New Product
Document Number: 70882
S-58611—Rev. A, 19-Jul-99
www.siliconix.com FaxBack 408-970-5600
1
Dual N- and P-Channel
20-V Low-Threshold MOSFET
Channel
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
N-Channel
20
2.0 @ V
GS
= 4.5 V
250
2.5 @ V
GS
= 2.5 V
150
P-Channel
–20
3.8 @ V
GS
= –4.5 V
–180
5.0 @ V
GS
= –2.5 V
–100
Very Small Outline (SC-70, 6-Leads)
Low On-Resistance: 2.0 (N-Ch)
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 35 ns
2.5-V or Lower Operation
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Replace Digital Transistors,
Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching-Cell Phones,
PDA
SOT-363
SC-70 (6-Leads)
S
1
1
3
G
1
2
D
2
6
4
5
D
1
G
2
S
2
Order Number:
TC0205AD
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
20
–20
V
Gate-Source Voltage
V
GS
8
8
Continuous Drain Current (T
J
= 150 C)
a
T
A
= 25 C
I
D
250
–180
T
A
= 70 C
200
–140
mA
Pulsed Drain Current
I
DM
500
–500
Maximum Power Dissipation
Maximum Power Dissi ation
a
T
A
= 25 C
P
D
0.20 (Total)
W
T
A
= 70 C
0.13 (Total)
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
625 (Total)
C/W
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
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相關代理商/技術參數 |
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