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參數(shù)資料
| 型號： | TC3967 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2W Packaged Self-Bias PHEMT GaAs Power FETs |
| 中文描述： | 2W的包裝自偏置PHEMT的砷化鎵功率場效應(yīng)管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 25K |
| 代理商： | TC3967 |
TC3967
REV.1_04/27/2005
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P 1/1
2W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES
2W Typical Output Power
12.5dB Typical Linear Power Gain at 2.45GHz
High Linearity:
IP3 = 43 dBm Typical
High Power Added Efficiency:
Nominal PAE of 35%
Breakdown Voltage: BV
DGO
≥
15V
Wg = 5 mm
100 % DC Tested
Suitable for High Reliability Application
Lost Cost Ceramic Package
DESCRIPTION
The TC3967 is a self-bias Cu-based ceramic packaged device with TC1601N PHEMT GaAs FETs, which is
designed to provide the single power supply application. The Cu-based ceramic package provides excellent
thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and
ground the source, which is suitable for oscillator, power amplifier application in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol
CONDITIONS
Output Power at 1dB Gain Compression Point
V
DS
= 8 V
Linear Power Gain
V
DS
= 8 V
Intercept Point of the 3
rd
-order Intermodulation
V
DS
= 8 V, *P
SCL
= 20 dBm
PAE
Power Added Efficiency at 1dB Compression Power
I
DS
Drain-Source Current at V
DS
= 8 V
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
= 1.2mA
R
th
Thermal Resistance
Note: *P
SCL
: Output Power of Single Carrier Level.
MIN
32
TYP
33
12.5
MAX
UNIT
dBm
dB
P
1dB
G
L
IP3
43
dBm
35
600
18
8
%
mA
Volts
°
C/W
15
PHOTO ENLARGEMENT
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| TC3977 | 制造商:TRANSCOM 制造商全稱:TRANSCOM 功能描述:3 W Packaged Single-Bias PHEMT GaAs Power FETs |
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