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參數(shù)資料
| 型號： | TC55NEM216AFTN55 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| 中文描述： | 東芝馬鞍山數(shù)字集成電路硅柵CMOS |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 181K |
| 代理商： | TC55NEM216AFTN55 |
TC55NEM216AFTN55,70
2002-07-04 1/11
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
DESCRIPTION
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V
±
10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3
mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1
μ
A standby
current (typ) when chip enable (CE) is asserted high. There are two control inputs. CE is used to select the device
and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB,
UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme
temperature range of
40° to 85°C, the TC55NEM216AFTN can be used in environments exhibiting extreme
temperature conditions. The TC55NEM216AFTN is available in a plastic 54-pin thin-small-outline package
(TSOP).
FEATURES
Low-power dissipation
Operating: 15 mW/MHz (typical)
Single power supply voltage of 5 V
±
10%
Power down features using CE
Data retention supply voltage of 2.0 to 5.5 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of
40° to 85°C
Standby Current (maximum): 20
μ
A
PIN ASSIGNMENT
(TOP VIEW)
54 PIN TSOP
PIN NAMES
A0~A17
Address Inputs
CE
Chip Enable
R/W
Read/Write Control
OE
Output Enable
LB ,
UB
Data Byte Control
I/O1~I/O16
Data Inputs/Outputs
V
DD
Power (
+
5 V)
GND
Ground
NC
No Connection
OP
*
Option
*
: OP pin must be open or connected to GND.
Access Times (maximum):
TC55NEM216AFTN
55
70
Access Time
55 ns
70 ns
CE
Access Time
55 ns
70 ns
OE
Access Time
30 ns
35 ns
Package:
TSOP II54-P-400-0.80
(Weight: g typ)
NC
A3
A2
A1
A0
I/O16
I/O15
V
GND
I/O14
I/O13
UB
R/W
I/O12
I/O11
GND
V
I/O10
I/O9
NC
A17
A16
A15
A14
A13
A4
A5
A6
A7
NC
I/O1
I/O2
V
GND
I/O3
I/O4
NC
I/O5
I/O6
GND
V
I/O7
I/O8
A8
A9
A10
A11
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
CE
OE
LB
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TC55NEM216AFTN70 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM216ASGV70LA | 功能描述:IC SRAM 4MBIT 70NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| TC55NEM216ASTV55 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM216ASTV70 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM216ATGN55LA | 功能描述:IC SRAM 4MBIT 55NS 54TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
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