- 您現在的位置：買賣IC網 > PDF目錄385904 > TC55VEM208ASTN40 (Toshiba Corporation) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS PDF資料下載
參數資料
| 型號： | TC55VEM208ASTN40 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| 中文描述： | 東芝馬鞍山數字集成電路硅柵CMOS |
| 文件頁數： | 1/11頁 |
| 文件大小： | 173K |
| 代理商： | TC55VEM208ASTN40 |
TC55VEM208ASTN40,55
2002-08-07 1/11
(Normal)
17
32
16
1
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT STATIC RAM
DESCRIPTION
The TC55VEM208ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by
8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to
3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of
3 mA/MHz (typ) and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7
μ
A standby
current (typ) when chip enable (CE) is asserted high. There are two control inputs. CE is used to select the device
and for data retention control, and output enable (OE ) provides fast memory access. This device is well suited to
various microprocessor system applications where high speed, low power and battery backup are required. The
TC55VEM208ASTN is available in a plastic 32-pin thin-small-outline package (TSOP).
FEATURES
Low-power dissipation
Operating: 9 mW/MHz (typical)
Single power supply voltage of 2.3 to 3.6 V
Power down features usingCE
Data retention supply voltage of 1.5 to 3.6 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of
40° to 85°C
Standby Current (maximum):
3.6 V
3.0 V
10
μ
A
5
μ
A
PIN ASSIGNMENT (TOP VIEW)
32 PIN TSOP
PIN NAMES
A0~A18
Address Inputs
R/W
Read/Write Control
OE
Output Enable
CE
Chip Enable
I/O1~I/O8
Data Inputs/Outputs
V
DD
Power
GND
Ground
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
A11
A9
A8
A13
R/W
A17
A15
V
DD
A18
A16
A14
A12
A7
A6
A5
A4
Pin No.
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
A3
A2
A1
A0
I/O1
I/O2
I/O3 GND I/O4
I/O5
I/O6
I/O7
I/O8
CE
A10
OE
Access Times:
TC55VEM208ASTN
40
55
Access Time
40 ns
55 ns
CE
Access Time
40 ns
55 ns
OE
Access Time
25 ns
30 ns
Package:
TSOP
32-P-0.50
(Weight:0.22 g typ)
相關PDF資料 |
PDF描述 |
|---|---|
| TC55VEM208ASTN55 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VL818FF-75 | 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步無轉向靜態 RAM) |
| TC55VL818FF-83 | 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步無轉向靜態 RAM) |
| TC58128DC | 128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8位 CMOS與非EEPROM) |
| TC58128FTI | 128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8位 CMOS與非EEPROM) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TC55VEM208ASTN55 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VEM208ASTN55LA | 制造商:Toshiba America Electronic Components 功能描述: |
| TC55VEM316AXBN | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VEM316AXBN40 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VEM316AXBN55 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
發布緊急采購，3分鐘左右您將得到回復。