- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384954 > TC58FT321-10 (Toshiba Corporation) 32M Bit (2M×16Bits ) CMOS Flash Memory(2M×16位CMOS閃速存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | TC58FT321-10 |
| 廠商： | Toshiba Corporation |
| 英文描述： | 32M Bit (2M×16Bits ) CMOS Flash Memory(2M×16位CMOS閃速存儲(chǔ)器) |
| 中文描述： | 32兆位（200萬× 16位）的CMOS快閃記憶體（200萬× 16位的CMOS閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 1/46頁 |
| 文件大小： | 518K |
| 代理商： | TC58FT321-10 |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
TC58FVT321/B321FT-10
2000-08-30 1/46
Block erase architecture
8
×
8 Kbytes / 63
×
64 Kbytes
Boot block architecture
TC58FVT321FT: top boot block
TC58FVB321FT: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10
5
cycles typ.
Access time
100 ns
(C
L
: 100 pF)
90 ns
(C
L
: 30 pF)
Power consumption
10
μ
A
(Standby)
30 mA
(Read operation)
15 mA
(Program/Erase operations)
Package
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TENTATIVE
32-MBIT (4M
×
8 BITS
/
2M
×
16 BITS) CMOS FLASH MEMORY
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory
organized as 4,194,304 words
×
8 bits or as 2,097,152 words
×
16 bits. The TC58FVT321/B321 features commands
for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on
the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES
Power supply voltage
V
DD
=
2.7 V~3.6 V
Operating temperature
Ta
=
40
°
C~85
°
C
Organization
4M
×
8 bits / 2M
×
16 bits
Functions
Simultaneous Read/Write
Auto Program, Auto Erase
Fast Program Mode / Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
PIN ASSIGNMENT
(TOP VIEW)
PIN NAMES
A-1, A0~A20 Address Input
DQ0~DQ15
Data Input/Output
CE
Chip Enable Input
OE
Output Enable Input
BYTE
Word/Byte Select Input
WE
Write Enable Input
BY
/
RY
Ready/Busy Output
RESET
Hardware Reset Input
/ACC
WP
Write Protect
/
Program Acceleration Input
NC
Not Connected
V
DD
Power Supply
V
SS
Ground
BYTE
V
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
V
SS
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
OE
CE
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE
NC
/
A17
A7
A6
A5
A4
A3
A2
A1
RESET
/ACC
RY
WP
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
000707EBA2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC58FVT321-10 | 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS閃速存儲(chǔ)器) |
| TC58FV321 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58NS256DC | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) |
| TC58V32ADC | 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS閃速存儲(chǔ)器) |
| TC59RM716RB-6 | 128M Bits（256K x16x32Banks）DRAM(128M位（256K x16x32組）動(dòng)態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC58FV321 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVB004FT-10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY |
| TC58FVB004FT-12 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY |
| TC58FVB004FT-85 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY |
| TC58FVB160A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。