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THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TCS450
450 Watts, 45 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The TCS450 s a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz, with the
pulse width and duty required for TCAS applications. The device has gold
thin-film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input prematch for broadband capaility. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55KT Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 1166 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 40 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
Pd
VSWR
Power Input
Power Gain
Collector Efficiency
Pulse Droop
Load Mismatch Tolerance
Vcc = 45 Volts
PW = 32
μ
sec
DF = 1%
F = 1030MHz
100
Watts
dB
%
dB
Power Out
F = 1030 MHz
450
Watts
6.2
45
0.25
6:1
BVebo
1
BVces
Cob
h
FE
θ
jc
2
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ic = 30 mA
Vcb = 50 Volts
Ic = 500 mA, Vce = 5 V
55
Volts
pF
1
Emitter to Base Breakdown
Ie = 30 mA
3.5
Volts
10
0.15
C/W
o
Note 1: Not measureable due to internal DC Return.
2: At rated pulse conditions
Revision 2, July 7, 1997