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參數資料
| 型號： | TD62S050AFM |
| 廠商： | Toshiba Corporation |
| 英文描述： | TD62S050AFM |
| 中文描述： | TD62S050AFM |
| 文件頁數： | 1/5頁 |
| 文件大小： | 94K |
| 代理商： | TD62S050AFM |
TD62S050AFM
2001-12-05
2
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CEO
50
V
Output withstand voltage
V
CE (SUS)
50
V
Output current
I
OUT
500
mA
Input voltage
V
IN
0.5~30
V
Clamp diode reverse voltage
V
R
50
V
Clamp diode forward current
I
F
500
mA
Power dissipation
P
D
(Note 4)
0.78
W
R
th (j-a)
(Note 4)
160
Saturated thermal resistance
R
th (j-c)
(Note 5)
25
°C/W
Operating temperature
T
opr
40~85
°C
Storage temperature
T
stg
55~150
°C
Note 4: 114.3 76.2 1.6 mm glass epoxy film substrate Cu heat dissipation pattern 100 mm
2
Note 5: When an infinite heat sink is mounted.
Recommended Operating Condition
(Ta 40~85°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output withstand voltage
V
CEO
0
50
V
Output current
I
OUT
Ta 60°C, T
j
105°C
220
mA
Input voltage
V
IN
0
24
V
Output ON
V
IN (ON)
I
OUT
400 mA, h
FE
800
2.8
24
Input voltage
Output OFF
V
IN (OFF)
0
0.7
V
Clamp diode reverse voltage
V
R
50
V
Clamp diode forward current
I
F
350
mA
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Output leakage current
I
CEX
1
V
CE
50 V, V
IN
OPEN
10
A
I
OUT
300 mA, I
IN
500 A
1.1
1.3
Output saturation voltage
V
CE (sat)
2
I
OUT
200 mA, I
IN
350 A
1.0
1.2
V
DC current amplification ratio
h
FE
2
V
CE
2.0 V, I
OUT
350 mA
1000
Input current
Output ON
I
IN (ON)
3
V
IN
2.4 V, I
OUT
350 mA
0.4
0.7
mA
Output ON
I
OUT
350 mA
2.6
Input voltage
Output ON
V
IN (ON)
4
V
CE
2 V,
h
FE
800
I
OUT
200 mA
2.2
V
Clamp diode leakage current
I
R
5
V
R
50 V
10
A
Clamp diode forward voltage
V
F
6
I
F
350 mA
1.6
2.0
V
Turn-on delay
t
ON
0.02
Turn-off delay
t
OFF
7
V
OUT
50 V, R
L
125 ,
C
L
15 pF
1.0
s
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