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參數資料
| 型號： | TD9944TG |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 240 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | SO-8 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 81K |
| 代理商： | TD9944TG |
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
1
2
3
4
8
7
6
5
SO-8
top view
TD9944
Low Threshold
Dual N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
DSS
/
BV
DGS
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
SO-8
240V
6.0
2.0V
1.0A
TD9944TG
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
±
20V
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
Features
Dual N-channel devices
Low threshold — 2.0V max.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low Threshold DMOS Technology
These dual low threshold enhancement-mode (normally-off)
transistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Pin Configuration
Order Number/Package
Note: See Package Outline section for dimensions.
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