- 您現在的位置：買賣IC網 > PDF目錄383991 > TE28F010-150 (INTEL CORP) 28F010 1024K (128K X 8) CMOS FLASH MEMORY PDF資料下載
參數資料
| 型號： | TE28F010-150 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 中文描述： | 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 |
| 封裝： | 0.310 X 0.720 INCH, TSOP-32 |
| 文件頁數： | 1/33頁 |
| 文件大?。?/td> | 895K |
| 代理商： | TE28F010-150 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁
E
December 1997
Order Number: 290207-012
8
n
Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
n
Quick-Pulse Programming Algorithm
10 μs Typical Byte-Program
2 Second Chip-Program
n
100,000 Erase/Program Cycles
n
12.0 V ±5% V
PP
n
High-Performance Read
90 ns Maximum Access Time
n
CMOS Low Power Consumption
10 mA Typical Active Current
50 μA Typical Standby Current
0 Watts Data Retention Power
n
Integrated Program/Erase Stop Timer
n
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
n
Noise Immunity Features
±10% V
CC
Tolerance
Maximum Latch-Up Immunity
through EPI Processing
n
ETOX Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
n
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
n
Extended Temperature Options
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases
memory flexibility, while contributing to time and cost savings.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel’s 28F010 is
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC
standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V
PP
supply, the
28F010 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 μA translates into
power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved
through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on
address and data pins, from –1 V to V
CC
+ 1 V.
With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
28F010 1024K (128K X 8) CMOS
FLASH MEMORY
相關PDF資料 |
PDF描述 |
|---|---|
| TE28F010-120 | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| TE28F016B3B110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3B110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3B90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TE28F010-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| TE28F016 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3B150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
發布緊急采購，3分鐘左右您將得到回復。