- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384968 > TE28F016B3T120 (INTEL CORP) SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE PDF資料下載
參數(shù)資料
| 型號： | TE28F016B3T120 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 中文描述： | 2M X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封裝： | 10 X 20 MM, TSOP-40 |
| 文件頁數(shù)： | 1/49頁 |
| 文件大?。?/td> | 408K |
| 代理商： | TE28F016B3T120 |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁
E
PRELIMINARY
May 1997
Order Number: 290605-001
n
Flexible SmartVoltage Technology
2.7V
–3.6V Program/Erase
2.7V–3.6V Read Operation
12V V
PP
Fast Production
Programming
n
2.7V or 1.8V I/O Option
Reduces Overall System Power
n
Optimized Block Sizes
Eight 8-Kbyte Blocks for Data,
Top or Bottom Locations
Up to Thirty-One 64-Kbyte Blocks
for Code
n
High Performance
2.7V–3.6V: 120 ns Max Access Time
n
Block Locking
V
CC
-Level Control through WP#
n
Low Power Consumption
20 mA Maximum Read Current
n
Absolute Hardware-Protection
V
PP
= GND Option
V
CC
Lockout Voltage
n
Extended Temperature Operation
–40°C to +85°C
n
Supports Code plus Data Storage
Optimized for FDI, Flash Data
Integrator Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
n
Extended Cycling Capability
10,000 Block Erase Cycles
n
Automated Byte Program and Block
Erase
Command User Interface
Status Registers
n
SRAM-Compatible Write Interface
n
Automatic Power Savings Feature
n
Reset/Deep Power-Down
1 μA I
CC
Typical
Spurious Write Lockout
n
Standard Surface Mount Packaging
48-Ball
μ
BGA* Package
40-Lead TSOP Package
n
Footprint Upgradeable
Upgradeable from 2-, 4- and 8-Mbit
Boot Block
n
ETOX V (0.4
μ)
Flash Technology
n
x8-Only Input/Output Architecture
For Space-Constrained 8-bit
Applications
The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4μ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and
interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Byte-Wide
products will be available in 40-lead TSOP and 48-ball μBGA* packages. Additional information on this
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp
SMART 3 ADVANCED BOOT BLOCK
BYTE-WIDE
8-MBIT (1024K x 8), 16-MBIT (2056K x 8)
FLASH MEMORY FAMILY
28F008B3, 28F016B3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F016B3T150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TEA0652 | MONOLITHISCHE STEREO IS |
| TEA0654 | MONOLITHISCHE STEREO IS |
| TEA1017 | 13 BIT SERIES PARALLEL CONVERTER |
| TEA1060 | VERSATILE TELEPHONE TRANSMISSION CIRCUITS WITH DIALLER INTERFACE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F016B3T150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3TA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016C3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。