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參數資料
| 型號： | TE28F160B3B150 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 中文描述： | 1M X 16 FLASH 3V PROM, 150 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數： | 1/49頁 |
| 文件大小： | 427K |
| 代理商： | TE28F160B3B150 |
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E
PRELIMINARY
May 1997
Order Number: 290580-002
n
Flexible SmartVoltage Technology
2.7V
–3.6V Program/Erase
2.7V–3.6V Read Operation
12V V
PP
Fast Production
Programming
n
2.7V or 1.8V I/O Option
Reduces Overall System Power
n
Optimized Block Sizes
Eight 4-KW Blocks for Data,
Top or Bottom Locations
Up to Thirty-One 32-KW Blocks for
Code
n
High Performance
2.7V–3.6V: 120 ns Max Access Time
n
Block Locking
V
CC
-Level Control through WP#
n
Low Power Consumption
20 mA Maximum Read Current
n
Absolute Hardware-Protection
V
PP
= GND Option
V
CC
Lockout Voltage
n
Extended Temperature Operation
–40°C to +85°C
n
Supports Code Plus Data Storage
Optimized for FDI, Flash Data
Integrator Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
n
Extended Cycling Capability
10,000 Block Erase Cycles
n
Automated Word Program and Block
Erase
Command User Interface
Status Registers
n
SRAM-Compatible Write Interface
n
Automatic Power Savings Feature
n
Reset/Deep Power-Down
1 μA I
CC
Typical
Spurious Write Lockout
n
Standard Surface Mount Packaging
48-Ball
μ
BGA* Package
48-Lead TSOP Package
n
Footprint Upgradeable
Upgradeable from 2-, 4- and 8-Mbit
Boot Block
n
ETOX V (0.4
μ)
Flash Technology
The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4μ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and
interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Word-Wide
products will be available in 48-lead TSOP and 48-ball μBGA* packages. Additional information on this
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp.
SMART 3 ADVANCED BOOT BLOCK
WORD-WIDE
4-MBIT (256K X 16), 8-MBIT (512K X 16),
16-MBIT (1024K X 16)
FLASH MEMORY FAMILY
28F400B3, 28F800B3, 28F160B3
相關PDF資料 |
PDF描述 |
|---|---|
| TE28F160B3BC70 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F400B3B120 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400B3B150 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400B3BA110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F400B3BA90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TE28F160B3-B150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F160B3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F160B3BA110 | 制造商:Intel 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP |
| TE28F160B3BA110S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
| TE28F160B3BA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
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