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參數資料
| 型號： | TE28F160B3BA90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數： | 1/48頁 |
| 文件大小： | 304K |
| 代理商： | TE28F160B3BA90 |
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E
PRELIMINARY
July 1998
Order Number: 290580-005
n
Flexible SmartVoltage Technology
2.7 V
–3.6 V Read/Program/Erase
12 V V
PP
Fast Production
Programming
n
2.7 V or 1.65 V I/O Option
Reduces Overall System Power
n
High Performance
2.7 V–3.6 V: 90 ns Max Access Time
3.0 V–3.6 V: 80 ns Max Access Time
n
Optimized Block Sizes
Eight 8-KB Blocks for Data,
Top or Bottom Locations
Up to Sixty-Three 64-KB Blocks for
Code
n
Block Locking
V
CC
-Level Control through WP#
n
Low Power Consumption
10 mA Typical Read Current
n
Absolute Hardware-Protection
V
PP
= GND Option
V
CC
Lockout Voltage
n
Extended Temperature Operation
–40 °C to +85 °C
n
Flash Data Integrator Software
Flash Memory Manager
System Interrupt Manager
Supports Parameter Storage,
Streaming Data (e.g., Voice)
n
Automated Program and Block Erase
Status Registers
n
Extended Cycling Capability
Minimum 100,000 Block Erase
Cycles Guaranteed
n
Automatic Power Savings Feature
Typical I
CCS
after Bus Inactivity
n
Standard Surface Mount Packaging
48-Ball
μ
BGA* Package
48-Lead TSOP Package
40-Lead TSOP Package
n
Footprint Upgradeable
Upgrade Path for 4-, 8-, 16-, and 32-
Mbit Densities
n
ETOX VI (0.25
μ)
Flash Technology
The Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7 V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.65 V, which significantly reduces system active power and
interfaces to 1.65 V controllers. A new blocking scheme enables code and data storage within a single
device. Add to this the Intel-developed Flash Data Integrator (FDI) software, and you have a cost-effective,
monolithic code plus data storage solution. Smart 3 Advanced Boot Block products will be available in 40-
lead and 48-lead TSOP and 48-ball μBGA* packages. Additional information on this product family can be
obtained by accessing Intel’s WWW page: http://www.intel.com/design/flash.
SMART 3 ADVANCED BOOT BLOCK
4-, 8-, 16-, 32-MBIT
FLASH MEMORY FAMILY
28F400B3, 28F800B3, 28F160B3, 28F320B3
28F008B3, 28F016B3, 28F032B3
相關PDF資料 |
PDF描述 |
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| TE28F016B3TA110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3TA90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3T90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3TA110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3TA90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TE28F160B3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F160B3BC80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F160B3BD70 | 制造商:Intel 功能描述: |
| TE28F160B3BD70A | 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| TE28F160B3T110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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