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參數(shù)資料
| 型號(hào)： | TE28F160S3-120 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 120 ns, PDSO56 |
| 封裝： | 14 X 20 MM, TSOP-56 |
| 文件頁數(shù)： | 1/52頁 |
| 文件大?。?/td> | 1262K |
| 代理商： | TE28F160S3-120 |
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E
ADVANCE INFORMATION
June 1997
Order Number: 290608-001
n
Two 32-Byte Write Buffers
2.7
μ
s per Byte Effective
Programming Time
n
Low Voltage Operation
2.7V or 3.3V V
CC
2.7V, 3.3V or 5V V
PP
n
100 ns Read Access Time (16 Mbit)
110 ns Read Access Time (32 Mbit)
n
High-Density Symmetrically-Blocked
Architecture
32 64-Kbyte Erase Blocks (16 Mbit)
64 64-Kbyte Erase Blocks (32 Mbit)
n
System Performance Enhancements
STS Status Output
n
Industry-Standard Packaging
μ
BGA* package, SSOP, and
TSOP (16 Mbit)
μ
BGA* package and SSOP (32 Mbit)
n
Cross-Compatible Command Support
Intel Standard Command Set
Common Flash Interface (CFI)
Scaleable Command Set (SCS)
n
100,000 Block Erase Cycles
n
Enhanced Data Protection Features
Absolute Protection with V
PP
= GND
Flexible Block Locking
Block Erase/Program Lockout
during Power Transitions
n
Configurable x8 or x16 I/O
n
Automation Suspend Options
Program Suspend to Read
Block Erase Suspend to Program
Block Erase Suspend to Read
n
ETOX V Nonvolatile Flash
Technology
Intel’s Word-Wide FlashFile memory family provides high-density, low-cost, non-volatile, read/write storage
solutions for a wide range of applications. The Word-Wide FlashFile memories are available at various
densities in the same package type. Their symmetrically-blocked architecture, flexible voltage, and extended
cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards.
Enhanced suspend capabilities provide an ideal solution for code or data storage applications. For secure
code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the Word-Wide FlashFile memories offer three levels of protection: absolute protection
with V
PP
at GND, selective block locking, and program/erase lockout during power transitions. These
alternatives give designers ultimate control of their code security needs.
This family of products is manufactured on Intel’s 0.4
μ
m ETOX V process technology. It comes in the
industry-standard 56-lead SSOP and
μ
BGA packages. In addition, the 16-Mb device is available in the
industry-standard 56-lead TSOP package.
WORD-WIDE
FlashFile MEMORY FAMILY
28F160S3, 28F320S3
Includes Extended Temperature Specifications
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F160S3-130 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| TE28F160S3-75 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| TE28F160S375-RFB | 制造商:Intel 功能描述: |
| TE28F200B5B80 | 制造商:Intel 功能描述: |
| TE28F200B5T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
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