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參數資料
| 型號： | TE28F640B3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory |
| 中文描述： | 3伏高級啟動塊閃存 |
| 文件頁數： | 1/58頁 |
| 文件大小： | 920K |
| 代理商： | TE28F640B3 |
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3 Volt Advanced Boot Block Flash
Memory
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Preliminary
Datasheet
Product Features
The 3 Volt Advanced Boot Block flash memory, manufactured on Intel’s latest 0.18
μ
m
technology, represents a feature-rich solution at overall lower system cost. The 3 Volt Advanced
Boot Block flash memory products in x16 will be available in 48-lead TSOP and 48-ball CSP
packages. The x8 option of this product family will only be available in 40-lead TSOP and 48-
ball μBGA* packages. Additional information on this product family can be obtained by
accessing Intel’s website at: http://www.intel.com/design/flash.
I
Flexible SmartVoltage Technology
—2.7 V–3.6 V Read/Program/Erase
—12 V V
PP
Fast Production Programming
I
2.7 V or 1.65 V I/O Option
—Reduces Overall System Power
I
High Performance
—2.7 V–3.6 V: 70 ns Max Access Time
I
Optimized Block Sizes
—Eight 8-KB Blocks for Data,Top or
Bottom Locations
—Up to One Hundred Twenty-Seven 64-
KB Blocks for Code
I
Block Locking
—V
CC
-Level Control through WP#
I
Low Power Consumption
—9 mA Typical Read Current
I
Absolute Hardware-Protection
—V
PP
= GND Option
—V
CC
Lockout Voltage
I
Extended Temperature Operation
—–40 °C to +85 °C
I
Automated Program and Block Erase
—Status Registers
I
Intel
Flash Data Integrator Software
—Flash Memory Manager
—System Interrupt Manager
—Supports Parameter Storage, Streaming
Data (e.g., Voice)
I
Extended Cycling Capability
—Minimum 100,000 Block Erase Cycles
Guaranteed
I
Automatic Power Savings Feature
—Typical I
CCS
after Bus Inactivity
I
Standard Surface Mount Packaging
—48-Ball CSP Packages
—40- and 48-Lead TSOP Packages
I
Density and Footprint Upgradeable for
common package
—4-, 8-, 16-, 32- and 64-Mbit Densities
I
ETOX VII (0.18
μ)
Flash Technology
—28F160/320/640B3xC
—4-, 8-, 16-, and 32-Mbit also exist on
ETOX V (0.4
μ)
and/or ETOX VI
(0.25
μ)
Flash Technology
I
x8 not recommended for new designs
I
4-Mbit density not recommended for new
designs
Order Number: 290580-012
October 2000
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
相關PDF資料 |
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| TE28F640B3BC100 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F640B3BC90 | 3 Volt Advanced Boot Block Flash Memory |
| TEA-566A | POWER MOSFET |
| TEA0655 | |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TE28F640B3BC100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F640B3BC90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F640B3TC100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F640B3TC90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F640C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
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