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| 型號： | TE28F640J3A-110 |
| 廠商： | Intel Corp. |
| 英文描述： | Intel StrataFlash Memory (J3) |
| 中文描述： | 英特爾StrataFlash存儲器（J3） |
| 文件頁數(shù)： | 1/72頁 |
| 文件大小： | 905K |
| 代理商： | TE28F640J3A-110 |
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Intel StrataFlash
Memory (J3)
256-Mbit (x8/x16)
Datasheet
Product Features
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash
Memory (J3)
device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-
Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-
per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed
interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future
devices.
Using the same NOR-based ETOX technology as Intel’s one-bit-per-cell products, the J3 device takes
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components
are ideal for code and data applications where high density and low cost are required. Examples include
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.
By applying FlashFile memory family pinouts, J3 memory components allow easy design migrations from
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash
memory (28F640J5 and 28F320J5) devices.
J3 memory components deliver a new generation of forward-compatible software support. By using the
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density
upgrades and optimized write capabilities of future Intel StrataFlash
memory devices. Manufactured on Intel
0.18 micron ETOX VII (J3C) and 0.25 micron ETOX VI (J3A) process technology, the J3 memory device
provides the highest levels of quality and reliability.
■
Performance
—110/115/120/150 ns Initial Access Speed
—125 ns Initial Access Speed (256 Mbit
density only)
—25 ns Asynchronous Page mode Reads
—30 ns Asynchronous Page mode Reads
(256Mbit density only)
—32-Byte Write Buffer
—6.8 μs per byte effective
programming time
■
Software
—Program and Erase suspend support
—Flash Data Integrator (FDI), Common
Flash Interface (CFI) Compatible
■
Security
—128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
—Absolute Protection with V
PEN
= GND
—Individual Block Locking
—Block Erase/Program Lockout during
Power Transitions
■
Architecture
—Multi-Level Cell Technology: High
Density at Low Cost
—High-Density Symmetrical 128-Kbyte
Blocks
—256 Mbit (256 Blocks) (0.18μm only)
—128 Mbit (128 Blocks)
—
6
4 Mbit (64 Blocks)
—32 Mbit (32 Blocks)
■
Quality and Reliability
—Operating Temperature:
-40 °C to +85 °C
—100K Minimum Erase Cycles per Block
—0.18 μm ETOX VII Process (J3C)
—0.25 μm ETOX VI Process (J3A)
■
Packaging and Voltage
—56-Lead TSOP Package
—64-Ball Intel
Easy BGA Package
—Lead-free packages available
—48-Ball Intel
VF BGA Package (32 and
64 Mbit) (x16 only)
—V
CC
=
2.7 V to 3.6 V
—V
CCQ
= 2.7 V to 3.6 V
Order Number: 290667-021
March 2005
Notice:
This document contains information on new products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
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| TE28F640J3A-115 | Intel StrataFlash Memory (J3) |
| TE28F256J3A-115 | Intel StrataFlash Memory (J3) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F640J3A-115 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| TE28F640J3A-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| TE28F640J3A-125 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| TE28F640J3A-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| TE28F640J3C | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
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