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參數資料
| 型號： | TF541S-A |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | TO-220F 5A High sensitive Thyristor |
| 中文描述： | 7.85 A, 400 V, SCR, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 30K |
| 代理商： | TF541S-A |
I
Features
G
Repetitive peak off-state voltage: V
DRM
=400, 600V
G
Average on-state current: I
T(AV)
=5A
G
High sensitive Gate trigger current: I
GT
=0.2mA max
G
Isolation voltage: V
ISO
=1500V(50Hz Sine wave, RMS)
I
Absolute Maximum Ratings
I
Electrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
V
V
V
A
A
A
A
V
V
W
W
°
C
°
C
V
Tj=–40 to +125
°
C, R
GK
=470
50Hz Half-cycle sinewave, Continuous current, Tc=88
°
C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125
°
C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
TF541S-A
400
400
500
500
TF561S-A
600
600
700
700
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
5.0
7.8
80
2.0
10
5.0
5.0
0.5
–40 to +125
1500
–40 to +125
V
V
mA
V
mA
V/
μ
S
μ
S
°
C/W
Parameter
Symbol
Ratings
typ
min
max
2.0
Unit
Conditions
mA
mA
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
tq
Rth
0.03
4.0
20
30
4.0
0.1
1.4
1.5
0.2
2.0
Tj=125
°
C,
V
D
=V
DRM
(V
RRM
), R
GK
=1k
T
C
=25
°
C,
I
TM
=10A
V
D
=6V, R
L
=10
, T
C
=25
°
C
R
GK
=1k
, Tj=25
°
C
V
D
=
1/2
×
V
DRM
, Tj
=
125
°
C,
R
GK
=
1k
, C
GK
=
0.033
μ
F
Junction to case
Tc=25
°
C
V
D
=1/2
×
V
DRM
, Tj=125
°
C,
R
GK
=1k
20
TF541S-A,TF561S-A
TO-220F 5A High sensitive Thyristor
1
±
0
8
±
0
0
±
0
3
±
0
4
±
0
10.0
±
0.2
4.2
±
0.2
2.8
1.35
±
0.15
1.35
±
0.15
0.85
+
0.2
2.4
±
0.2
2.2
±
0.2
φ
3.3
±
0.2
–
0.1
+
0.2
–
0.1
C0.5
1
2.54
2.54
0.45
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
(1). Cathode(K)
(2). Anode(A)
(3). Gate(G)
a. Part Number
b. Lot Number
(1) (2) (3)
a
b
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
f 50Hz
f 50Hz, duty 10%
f 50Hz, duty 10%
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相關代理商/技術參數 |
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| TF-586VM | 制造商:Lanner Electronics Inc 功能描述:ATX MAINBOARD; SOCKET-7 |
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