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參數(shù)資料
| 型號： | TF861S |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | TO-220F 8A Thyristor |
| 中文描述： | 12.56 A, 600 V, SCR, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 48K |
| 代理商： | TF861S |
I
Features
G
Repetitive peak off-state voltage: V
DRM
=200, 400, 600V
G
Average on-state current: I
T(AV)
=8A
G
Gate trigger current: I
GT
=15mA max
G
Isolation voltage: V
ISO
=1500V(50Hz Sine wave, RMS)
G
UL approved type available
I
Absolute Maximum Ratings
I
Electrical Characteristics
Parameter
Symbol
Ratings
TF841S
400
400
500
500
8.0
12.6
120
2.0
10
5.0
5.0
0.5
–40 to +125
Unit
Conditions
V
V
V
V
A
A
A
A
V
V
W
W
°
C
°
C
V
Tj=–40 to +125
°
C, R
GK
=1k
50Hz Half-cycle sinewave, Continuous current, Tc=87
°
C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125
°
C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
200
200
300
300
TF821S
TF861S
600
600
700
700
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
–40 to +125
1500
V
V
mA
V
mA
V/
μ
S
μ
S
°
C/W
Parameter
Symbol
Ratings
typ
min
max
2.0
Unit
Conditions
mA
mA
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
tq
Rth
5.0
4.0
50
30
3.6
0.1
1.4
1.5
15
2.0
Tj=125
°
C,
V
D
=V
DRM
(V
RRM
), R
GK
=1k
T
C
=25
°
C,
I
TM
=15A
V
D
=6V, R
L
=10
, T
C
=25
°
C
R
GK
=1k
, Tj=25
°
C
V
D
=
1/2
×
V
DRM
, Tj
=
125
°
C,
R
GK
=
1k
, C
GK
=
0.033
μ
F
Junction to case
Tc=25
°
C
V
D
=1/2
×
V
DRM
, Tj=125
°
C,
R
GK
=1k
16
1
±
0
8
±
0
0
±
0
3
±
0
4
±
0
10.0
±
0.2
4.2
±
0.2
2.8
1.35
±
0.15
1.35
±
0.15
0.85
+
0.2
2.4
±
0.2
2.2
±
0.2
φ
3.3
±
0.2
–
0.1
+
0.2
–
0.1
C0.5
1
2.54
2.54
0.45
TF821S,TF841S,TF861S
TO-220F 8A Thyristor
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
(1). Cathode(K)
(2). Anode(A)
(3). Gate(G)
a. Part Number
b. Lot Number
(1) (2) (3)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
f 50Hz
f 50Hz, duty 10%
f 50Hz, duty 10%
a
b
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