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參數(shù)資料
| 型號(hào)： | TFD312S series |
| 廠商： | Sanken Electric Co.,Ltd. |
| 英文描述： | TO-220F 3A Thyristor with built-in Avalanche diode(3A，內(nèi)置雪崩二極管的晶閘管（可控硅TO-220F封裝）) |
| 中文描述： | 到220F 3A條內(nèi)置雪崩二極管（3A條，內(nèi)置雪崩二極管的晶閘管晶閘管（可控硅至220F封裝）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 53K |
| 代理商： | TFD312S SERIES |
I
Absolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Average on-state current
RMS on-state current
Surge on-state current
Squared rated current and time product
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
I
Electrical Characteristics
8
V
DRM
8
V
BO
Symbol
V
DRM
I
T(AV)
Ratings
Unit
V
A
Conditions
50Hz Half-cycle sinewave, 180
°
, Continuous current, Tc
=
92
°
C
50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj
=
125
°
C
2ms t 10ms
f 50Hz, duty 10%
f 50Hz
50Hz Sine wave, RMS, Terminal to case, 1min.
(
Tj=25
°
C, unless otherwise specified)
A
A
V
V
W
W
°
C
°
C
V
I
T(RMS)
I
TSM
I
2
t
V
FGM
V
RGM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
4.7
60
18
1.5
5.0
5.0
0.5
–
40 to
+
125
1500
–
10 to
+
125
Tj
=–
10 to +125
°
C,
R
GK
=1k
3.0
f 50Hz, duty 10%
A
2
sec
V
mA
V
V
mA
V
mA
V/
μ
S
°
C/W
Parameter
Symbol
Ratings
typ
min
max
1.0
Unit
Conditions
mA
μ
A
I
DRM
V
BO
I
BO
V
TM
V
GT
I
GT
V
GT
I
H
dv/dt
Rth
40
8
8
1.0
10
15
5.0
0.1
0.2
0.2
15
1.4
100
Rank
Ratings
Tj=125
°
C, V
D
=V
DRM
, R
GK
=1k
Tj=25
°
C, V
D
=V
DRM
, R
GK
=1k
I
TM
=5A
V
D
=6V, R
L
=10
V
D
=V
DRM
, Tj=125
°
C, R
GK
=1k
R
GK
=1k
, Tj=125
°
C
Junction to case
V
D
=
V
DRM
, Tj
=
125
°
C, R
GK
=
1k
, C
GK
=
0.033
μ
F
I
Features
G
With built-in Avalanche diode
G
Average on-state current: I
T(AV)
=3A
G
Gate trigger current: I
GT
=10mA max
G
Isolation voltage: V
ISO
=1500V(50Hz AC, RMS, 1min.)
A
K
G
Reg.
Input
Application example
min
typ
max
-C
27
30
33
-F
50
55
60
-G
60
65
70
-J
90
100
110
-K
115
125
135
-L
140
150
160
-M
163
175
187
-N
185
200
215
-O
210
225
240
Rank
Ratings
-C
20
-F
35
-G
45
-J
80
-K
100
-L
120
-M
145
-N
170
-O
190
26
1
±
0
8
±
0
0
±
0
3
±
0
4
±
0
10.0
±
0.2
4.2
±
0.2
2.8
1.35
±
0.15
1.35
±
0.15
0.85
+
0.2
2.4
±
0.2
2.2
±
0.2
φ
3.3
±
0.2
–
0.1
+
0.2
–
0.1
C0.5
1
2.54
2.54
0.45
TFD312S series
TO-220F 3A Thyristor with built-in Avalanche diode
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
(1). Cathode(K)
(2). Anode(A)
(3). Gate(G)
a. Part Number
b. Lot Number
(1) (2) (3)
a
b
Off-state current
Breakover voltage
Breakover current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Thermal resistance
Load
Overvoltage detection
Overcurrent detection
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